Wolfspeed will release the 900W CGHV14800 GaN high electron mobility transistors (HEMTs) at European Microwave Week 2016.
Wolfspeed
Wolfspeed will release the 900W CGHV14800 GaN high electron mobility transistors (HEMTs) for L-Band radar applications at European Microwave Week 2016, which will take place in London from October 3-7, 2016. Wolfspeed will be at Booth #156.
Delivering a minimum of 800W of pulsed power at 1.2 – 1.4 GHz and 50V operation with better than 65% drain efficiency, the CGHV14800 also features:
- High efficiency, high gain, and wide bandwidth capabilities.
- Applicability in air traffic control (ATC) radar, penetration radar, antimissile system radar, target-tracking radar, and long-range surveillance radar.
- 14 dB power gain.
- <0.3 dB pulsed amplitude droop.
- A ceramic/metal flange package that can be shipped individually, or alongside or installed on a test board.
- Higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than conventional silicon (Si) and gallium arsenide (GaAs) devices.
For more information, visit www.wolfspeed.com/cghv14800; or call 919-407-5302.
