Littelfuse High-Side and Low-Side Gate Driver.
Littelfuse
Littelfuse (ROSEMONT, IL) has introduced the IXD2012NTR, a high-speed gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is intended for high-frequency power applications, supporting both high-side and low-side switching.
The IXD2012NTR enables half-bridge switching for high-frequency applications and supports the operation of two N-channel MOSFETs or IGBTs.
Features & Benefits
- Supports high-speed switching in half-bridge configurations.
- Operates over a wide 10 V to 20 V voltage range.
- Supports high-side switching up to 200 V in bootstrap mode.
- Logic inputs compatible with TTL and CMOS levels down to 3.3 V.
- Provides 1.9 A source and 2.3 A sink gate drive current.
- Integrated cross-conduction protection logic to prevent simultaneous high- and low-side switching.
- Supplied in a compact SOIC(N)-8 package.
- Operates from −40 °C to +125 °C.
- Drop-in compatible with industry-standard gate drivers.
Suitable for use in DC-DC converters, AC-DC inverters, motor controllers, Class-D power amplifiers, and various applications across industrial, appliance, energy storage, solar energy, and power tool markets.
For more information, visit the Littelfuse webpage.
