Four new RF switches utilize company’s Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor technology, enabling very high performance. With typical operating frequency band of 6 GHz, each has on-chip driver for single voltage control line. Models RF3021/3025 are symmetric SPDT switches with high isolation and single-bit control, housed in 16-pin 3x3 mm QFN package. RF3023/3024, each in 6-lead SC70 package, have low insertion loss and moderate isolation.